Photoluminescence studies on over-passivations of (NH4)2Sx-treated GaAs
- Author
- SHIKATA, S; HAYASHI, H
Sumitomo Electric Industries Ltd, opto-electronics R&D laboratories, Sakae-ku, Yokohama 244, Japan - Source
Journal of applied physics. 1991, Vol 70, Num 7, pp 3721-3725 ; ref : 21 ref
- CODEN
- JAPIAU
- ISSN
- 0021-8979
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics; Physics
- Publisher
- American Institute of Physics, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Composé minéral Etude expérimentale Gallium Arséniure Passivation Photoluminescence Rayonnement IR Semiconducteur
- Keyword (en)
- Inorganic compound Experimental study Gallium Arsenides Passivation Photoluminescence Infrared radiation Semiconductor materials
- Keyword (es)
- Compuesto inorgánico Estudio experimental Galio Arseniuro Pasivación Fotoluminiscencia Radiación infrarroja Semiconductor(material)
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H55 Photoluminescence
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5059361
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.349223 
https://dx.doi.org/10.1063/1.349223
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