A p-v-n diode model for CMOS latchup
- Author
- ZAPPE, H. P; CHENMING HU
Univ. California, dep. electrical eng. computer sci., Berkeley CA 94720, United States - Source
Solid-state electronics. 1991, Vol 34, Num 11, pp 1275-1279 ; ref : 7 ref
- ISSN
- 0038-1101
- Scientific domain
- Electronics
- Publisher
- Elsevier Science, Oxford
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Diode Longueur diffusion Modélisation Technologie MOS complémentaire Latch up Structure pnpn
- Keyword (en)
- Diode Diffusion length Modeling Complementary MOS technology Latch up
- Keyword (es)
- Diodo Longitud difusión Modelización Tecnología MOS complementario
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F03 Diodes
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5082484
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0038-1101(91)90068-A 
https://dx.doi.org/10.1016/0038-1101(91)90068-A
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