A simple expression for bande gap narrowing (BGN) in heavily doped Si, Ge GaAs aznd GexSi1-x strained layers
- Author
- JAIN, S. C; ROULSTON, D. J
Univ. Waterloo, dep. electrical computer eng., ON N2L 3G1, Canada - Source
Solid-state electronics. 1991, Vol 34, Num 5, pp 453-465 ; ref : 58 ref
- ISSN
- 0038-1101
- Scientific domain
- Electronics
- Publisher
- Elsevier Science, Oxford
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Bande interdite Dispositif semiconducteur Etude théorique Gallium Arséniure Niveau Fermi Silicium Simulation ordinateur
- Keyword (en)
- Energy gap Semiconductor device Theoretical study Gallium Arsenides Fermi level Silicon Computer simulation
- Keyword (es)
- Banda prohibida Dispositivo semiconductor Estudio teórico Galio Arseniuro Nivel Fermi Silicio Simulación computadora
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03B Testing, measurement, noise and reliability
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5091496
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0038-1101(91)90149-S 
https://dx.doi.org/10.1016/0038-1101(91)90149-S
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