Photoemission spectroscopy and GaAs:As photodiodes
- Author
- MCINTURFF, D. T; WOODALL, J. M; WARREN, A. C; BRASLAU, N; PETTIT, G. D; KIRCHNER, P. D
IBM, res. div., Yorktown Heights NY 10598, United States - Source
Applied physics letters. 1992, Vol 60, Num 4, pp 449-450 ; ref : 8 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Diode couche intrinsèque Dispositif optoélectronique Emission photoélectronique Epitaxie Etude expérimentale Faisceau moléculaire Gallium Arséniure Mesure Photodiode
- Keyword (en)
- p i n diode Optoelectronic device Photoelectron emission Epitaxy Experimental study Molecular beam Gallium Arsenides Measurement Photodiode
- Keyword (es)
- Diodo capa intrínseca Dispositivo optoelectrónico Emisión fotoelectrónica Epitaxia Estudio experimental Haz molecular Galio Arseniuro Medida Fotodiodo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5118109
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.106630 
https://dx.doi.org/10.1063/1.106630
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