MOVPE growth and properties of GaP using nitrogen bridged adduct
- Autor
- KELLER, B. P1 ; SCHWABE, R; PICKENHAIN, R; SEIFERT, W; BUTTER, E; STAEHLI, J. L
[1] Univ. Leipzig, Sekt. Chemie Physik, Tech. Analytikum, Leipzig O-7010, Germany - Fuente
Journal of crystal growth. 1992, Vol 118, Num 1-2, pp 176-182 ; ref : 23 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Campo Científico
- Crystallography; Geology; Metallurgy, welding
- Editor
- Elsevier, Amsterdam
- País de la publicación
- Netherlands
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave (fr)
- Composé minéral Composé organométallique Concentration porteur charge Dépôt chimique phase vapeur Epitaxie Etude expérimentale Gallium Phosphure Photoluminescence Porteur libre Semiconducteur Température
- Palabra clave (in)
- Inorganic compound Organometallic compound Charge carrier concentration Chemical vapor deposition Epitaxy Experimental study Gallium Phosphides Photoluminescence Free carrier Semiconductor materials Temperature
- Palabra clave (es)
- Compuesto inorgánico Compuesto organometálico Concentración portador carga Depósito químico fase vapor Epitaxia Estudio experimental Galio Fosfuro Fotoluminiscencia Portador libre Semiconductor(material) Temperatura
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B20 Conductivity phenomena in semiconductors and insulators
- Disciplina
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 5132813
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0022-0248(92)90062-N 
https://dx.doi.org/10.1016/0022-0248(92)90062-N
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