Effect of band mixing on hole-tunneling times in GaAs/AlAs double-barrier heterostructures
- Author
- TING, D. Z.-Y; YU, E. T; MCGILL, T. C
California inst. technology, Thomas J. Watson, Sr Lab. applied physics, Pasadena CA 91125, United States - Source
Physical review. B, Condensed matter. 1992, Vol 45, Num 7, pp 3576-3582 ; ref : 23 ref
- CODEN
- PRBMDO
- ISSN
- 0163-1829
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- American Institute of Physics, Woodbury, NY
/
American Physical Society, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium Arséniure Composé minéral Effet tunnel Etude théorique Gallium Arséniure Hétérojonction Semiconducteur Structure électronique Trou Modèle orbitale liaison effective Structure 2 barrières
- Keyword (en)
- Aluminium Arsenides Inorganic compound Tunnel effect Theoretical study Gallium Arsenides Heterojunction Semiconductor materials Electronic structure Hole Double barrier structure
- Keyword (es)
- Aluminio Arseniuro Compuesto inorgánico Efecto túnel Estudio teórico Galio Arseniuro Heterounión Semiconductor(material) Estructura electrónica Hoyo
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C40 Electronic transport in interface structures
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5134016
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1103/PhysRevB.45.3576 
https://dx.doi.org/10.1103/PhysRevB.45.3576
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