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Effect of band mixing on hole-tunneling times in GaAs/AlAs double-barrier heterostructures

Author
TING, D. Z.-Y; YU, E. T; MCGILL, T. C
California inst. technology, Thomas J. Watson, Sr Lab. applied physics, Pasadena CA 91125, United States
Source

Physical review. B, Condensed matter. 1992, Vol 45, Num 7, pp 3576-3582 ; ref : 23 ref

CODEN
PRBMDO
ISSN
0163-1829
Scientific domain
Crystallography; Metallurgy, welding; Condensed state physics
Publisher
American Institute of Physics, Woodbury, NY / American Physical Society, Woodbury, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Aluminium Arséniure Composé minéral Effet tunnel Etude théorique Gallium Arséniure Hétérojonction Semiconducteur Structure électronique Trou Modèle orbitale liaison effective Structure 2 barrières
Keyword (en)
Aluminium Arsenides Inorganic compound Tunnel effect Theoretical study Gallium Arsenides Heterojunction Semiconductor materials Electronic structure Hole Double barrier structure
Keyword (es)
Aluminio Arseniuro Compuesto inorgánico Efecto túnel Estudio teórico Galio Arseniuro Heterounión Semiconductor(material) Estructura electrónica Hoyo
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C40 Electronic transport in interface structures

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
5134016

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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