A silicon-based multichip module with co-fired aluminum nitride package
- Author
- SUDO, T; KIMIJIMA, S; SHIMADA, O; IWASE, N
Toshiba Corp., res. development cent., Kawasaki-shi 210, Japan - Source
IEICE transactions. 1991, Vol 74, Num 8, pp 2323-2330 ; ref : 8 ref
- ISSN
- 0917-1673
- Scientific domain
- Electronics; Telecommunications
- Publisher
- Institute of Electronics, Information and Communication Engineers, Tokyo
- Publication country
- Japan
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium Nitrure Circuit VLSI Circuit intégré Conception circuit Couche mince Diaphonie Encapsulation Etude théorique Fréquence coupure Impédance caractéristique Performance Silicium
- Keyword (en)
- Aluminium Nitrides VLSI circuit Integrated circuit Circuit design Thin film Crosstalk Encapsulation Theoretical study Cut off frequency Characteristic impedance Performance Silicon
- Keyword (es)
- Aluminio Nitruro Circuito VLSI Circuito integrado Concepción circuito Capa fina Diafonía Encapsulación Estudio teórico Frecuencia corte Impedancia característica Rendimiento Silicio
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5136242
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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