Post growth tailoring of the optical properties of GaAs-AIGaAs multiple quantum wells
- Author
- GHISONI, M; GIBSON, M; RIVERS, A; BOYD, I. W; PARRY, G; ROBERTS, J. S
Univ. London IRC semiconductor materials, dep. electronic electrical eng., London WC1E 7JE, United Kingdom - Source
Electronics Letters. 1990, Vol 26, Num 14, pp 1058-1059 ; ref : 8 ref
- CODEN
- ELLEAK
- ISSN
- 0013-5194
- Scientific domain
- Electronics; Optics; Telecommunications
- Publisher
- Institution of Electrical Engineers, London
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium Gallium Arséniure Mixte Croissance Gallium Arséniure Optique intégrée Propriété optique Puits quantique
- Keyword (en)
- Aluminium Gallium Arsenides Mixed Growth Gallium Arsenides Integrated optics Optical properties Quantum well
- Keyword (es)
- Aluminio Galio Arseniuro Mixto Crecimiento Galio Arseniuro Optica integrada Propiedad óptica Pozo cuántico
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03G Electric, optical and optoelectronic circuits / 001D03G02 Circuit properties / 001D03G02C Optical and optoelectronic circuits
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5142103
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1049/el:19900685 
https://dx.doi.org/10.1049/el:19900685
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