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34 GHz bandwidth GaAs high-speed Schottky barrier photodiode fabricated by chemical-beam epitaxy

Author
SEKIGUCHI, Y; KUWAHARA, T; KOBAYASHI, F; IIO, S
Optical Measurement Technology Development Co. Ltd, Musashino-shi Tokyo 180, Japan
Source

Japanese journal of applied physics. 1992, Vol 31, Num 2B, pp L180-L182 ; 2 ; ref : 8 ref

CODEN
JJAPA5
ISSN
0021-4922
Scientific domain
Crystallography; Optics; Condensed state physics; Physics; Plasma physics
Publisher
Japanese journal of applied physics, Tokyo
Publication country
Japan
Document type
Article
Language
English
Keyword (fr)
Caractérisation Caractéristique courant tension Conception Condensation faisceau chimique Diode barrière Schottky Dispositif optoélectronique Epitaxie Gallium Arséniure Photodiode Photodétecteur
Keyword (en)
Characterization Voltage current curve Design Chemical beam condensation Schottky barrier diode Optoelectronic device Epitaxy Gallium Arsenides Photodiode Photodetector
Keyword (es)
Caracterización Característica corriente tensión Diseño Condensación haz químico Diodo barrera Schottky Dispositivo optoelectrónico Epitaxia Galio Arseniuro Fotodiodo Fotodetector
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
5143384

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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