Optimization of low pressure silicon nitride film growth from dichlorosilane and ammonia in integrated circuit manufacture
- Author
- PEEV, G; ZAMBOV, L
High inst. chemical technology, Sofia 1156, Bulgaria - Source
Thin solid films. 1991, Vol 203, Num 1, pp 185-193 ; ref : 24 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier Science, Lausanne
- Publication country
- Switzerland
- Document type
- Article
- Language
- English
- Keyword (fr)
- Circuit intégré Composé minéral Couche mince Croissance cristalline Dépôt chimique phase vapeur Méthode optimisation Silicium Nitrure
- Keyword (en)
- Integrated circuit Inorganic compound Thin film Crystal growth Chemical vapor deposition Optimization method Silicon Nitrides
- Keyword (es)
- Circuito integrado Compuesto inorgánico Capa fina Crecimiento cristalino Depósito químico fase vapor Método optimización Silicio Nitruro
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35J Surface and interface dynamics and vibrations
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5146600
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0040-6090(91)90528-6 
https://dx.doi.org/10.1016/0040-6090(91)90528-6
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