120W CW output power from monolithic AlGaAs (800 nm) laser diode array mounted in diamond heatsink
- Author
- SAKAMOTO, M; ENDRIZ, J. G; SCIFRES, D. R
Spectra diode laboratories, San Jose CA 95134-1356, United States - Source
Electronics Letters. 1992, Vol 28, Num 2, pp 197-199 ; ref : 2 ref
- CODEN
- ELLEAK
- ISSN
- 0013-5194
- Scientific domain
- Electronics; Optics; Telecommunications
- Publisher
- Institution of Electrical Engineers, London
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium Gallium Arséniure Mixte Laser injection Laser semiconducteur Onde entretenue Ouverture Puissance sortie Réseau laser Température ambiante
- Keyword (en)
- Aluminium Gallium Arsenides Mixed Injection laser Semiconductor laser Continuous wave Opening Output power Laser array Room temperature
- Keyword (es)
- Aluminio Galio Arseniuro Mixto Laser inyección Laser semiconductor Onda continua Abertura Potencia salida Red láser Temperatura ambiente
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B55 Lasers
- Discipline
- Physics : optics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5157763
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1049/el:19920123 
https://dx.doi.org/10.1049/el:19920123
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