Accounting for bandstructure effects in the hydrodynamic model : a first-order approach for silicon device simulation
- Author
- BORDELON, T. J; WANG, X.-L; MAZIAR, C. M; TASCH, A. F
Univ. Texas at Austin, dep. electrical computer eng., Austin TX 78712, United States - Source
Solid-state electronics. 1992, Vol 35, Num 2, pp 131-139 ; ref : 21 ref
- ISSN
- 0038-1101
- Scientific domain
- Electronics
- Publisher
- Elsevier Science, Oxford
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Dispositif semiconducteur Etude théorique Modèle hydrodynamique Modélisation Méthode Monte Carlo Silicium Simulation ordinateur Transistor MOS
- Keyword (en)
- Semiconductor device Theoretical study Hydrodynamic model Modeling Monte Carlo method Silicon Computer simulation MOS transistor
- Keyword (es)
- Dispositivo semiconductor Estudio teórico Modelo hidrodinámico Modelización Método Monte Carlo Silicio Simulación computadora Transistor MOS
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F22 Miscellaneous
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5166879
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0038-1101(92)90052-E 
https://dx.doi.org/10.1016/0038-1101(92)90052-E
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