A study of defects induced in GaAs by plasma etching
- Author
- HE, L; ANDERSON, W. A
State univ. New York at Buffalo, cent. electronic electro-optic materials, dep. electrical computer eng., Amherst NY 14260, United States - Source
Solid-state electronics. 1992, Vol 35, Num 2, pp 151-156 ; ref : 21 ref
- ISSN
- 0038-1101
- Scientific domain
- Electronics
- Publisher
- Elsevier Science, Oxford
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Caractérisation défaut Fabrication microélectronique Gallium Arséniure Gravure plasma Gravure Réflexion optique Spectrométrie réflexion Spectrométrie transitoire niveau profond
- Keyword (en)
- Defect characterization Microelectronic fabrication Gallium Arsenides Plasma etching Engraving Optical reflection Reflection spectrometry Deep level transient spectrometry
- Keyword (es)
- Caracterización defecto Fabricación microeléctrica Galio Arseniuro Grabado plasma Grabado Reflexión óptica Espectrometría reflexión Espectrometría transitoria nivel profundo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5166881
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0038-1101(92)90054-G 
https://dx.doi.org/10.1016/0038-1101(92)90054-G
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