Poiseuille flow of the phonon gas in bismuth under size effect conditions
- Author
- RED'KO, N. A; KAGAN, V. D; TYBULEWICZ, A (Translator)
Acad. sci. USSR, A.F. Ioffe physicotech. inst., Leningrad, Ussr - Source
Soviet physics. Solid state. 1991, Vol 33, Num 8, pp 1358-1360 ; ref : 7 ref
- ISSN
- 0038-5654
- Scientific domain
- Condensed state physics
- Publisher
- American Institute of Physics, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Basse température Bismuth Conductivité thermique Diffusion phonon Ecoulement Poiseuille Effet dimensionnel Etude expérimentale Monocristal Processus Umklapp Température Très basse température
- Keyword (en)
- Low temperature Bismuth Thermal conductivity Phonon scattering Poiseuille flow Size effect Experimental study Single crystal Umklapp process Temperature Very low temperature
- Keyword (es)
- Baja temperatura Bismuto Conductividad térmica Difusión fonón Flujo Poiseuille Efecto dimensional Estudio experimental Monocristal Proceso Umklapp Temperatura Temperatura muy baja
- Keyword (de)
- Tieftemperatur Bismut Waermeleitfaehigkeit Groesseneffekt Experimentelle Untersuchung Einkristall Temperatur Tiefsttemperatur
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60F Transport properties of condensed matter (nonelectronic) / 001B60F70 Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves
- Discipline
- Metals. Metallurgy Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5167632
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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