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A GaAs floated electron channel field effect transistor (FECFET) fabricated by selective metal organic chemical vapor deposition

Author
CHANG-TAE KIM; CHANG-HEE HONG; YOUNG-SE KWON
Korea advanced inst. sci. technology, dep. electrical eng., Cheongryang Seoul 130-650, Korea, Republic of
Source

Japanese journal of applied physics. 1991, Vol 30, Num 12B, pp 3828-3832 ; 1 ; ref : 10 ref

CODEN
JJAPA5
ISSN
0021-4922
Scientific domain
Crystallography; Optics; Condensed state physics; Physics; Plasma physics
Publisher
Japanese journal of applied physics, Tokyo
Publication country
Japan
Document type
Article
Language
English
Keyword (fr)
Caractéristique courant tension Composé organométallique Dépôt chimique phase vapeur Fabrication microélectronique Forme triangulaire Gallium Arséniure Gravure sélective Transistor effet champ Transistor effet champ canal électron flottant
Keyword (en)
Voltage current curve Organometallic compound Chemical vapor deposition Microelectronic fabrication Triangular shape Gallium Arsenides Selective etching Field effect transistor Floated electron channel fielf effect transistor
Keyword (es)
Característica corriente tensión Compuesto organometálico Depósito químico fase vapor Fabricación microeléctrica Forma triangular Galio Arseniuro Grabado selectivo Transistor efecto campo
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
5170493

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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