A GaAs floated electron channel field effect transistor (FECFET) fabricated by selective metal organic chemical vapor deposition
- Author
- CHANG-TAE KIM; CHANG-HEE HONG; YOUNG-SE KWON
Korea advanced inst. sci. technology, dep. electrical eng., Cheongryang Seoul 130-650, Korea, Republic of - Source
Japanese journal of applied physics. 1991, Vol 30, Num 12B, pp 3828-3832 ; 1 ; ref : 10 ref
- CODEN
- JJAPA5
- ISSN
- 0021-4922
- Scientific domain
- Crystallography; Optics; Condensed state physics; Physics; Plasma physics
- Publisher
- Japanese journal of applied physics, Tokyo
- Publication country
- Japan
- Document type
- Article
- Language
- English
- Keyword (fr)
- Caractéristique courant tension Composé organométallique Dépôt chimique phase vapeur Fabrication microélectronique Forme triangulaire Gallium Arséniure Gravure sélective Transistor effet champ Transistor effet champ canal électron flottant
- Keyword (en)
- Voltage current curve Organometallic compound Chemical vapor deposition Microelectronic fabrication Triangular shape Gallium Arsenides Selective etching Field effect transistor Floated electron channel fielf effect transistor
- Keyword (es)
- Característica corriente tensión Compuesto organometálico Depósito químico fase vapor Fabricación microeléctrica Forma triangular Galio Arseniuro Grabado selectivo Transistor efecto campo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5170493
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:128:\"A GaAs floated electron channel field effect transistor (FECFET) fabricated by selective metal organic chemical vapor deposition\";s:9:\"\u0000*\u0000jtitle\";s:35:\"Japanese journal of applied physics\";s:9:\"\u0000*\u0000stitle\";s:18:\"Jpn. j. appl. phys\";s:7:\"\u0000*\u0000date\";s:4:\"1991\";s:9:\"\u0000*\u0000volume\";s:2:\"30\";s:8:\"\u0000*\u0000issue\";s:3:\"12B\";s:8:\"\u0000*\u0000spage\";s:4:\"3828\";s:8:\"\u0000*\u0000epage\";s:4:\"3832\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0021-4922\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:13:\"CHANG-TAE KIM\";s:10:\"\u0000*\u0000aufirst\";s:0:\"\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:14:\"CHANG-HEE HONG\";i:1;s:13:\"YOUNG-SE KWON\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JJAPA5\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:1:\"1\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:128:\"A GaAs floated electron channel field effect transistor (FECFET) fabricated by selective metal organic chemical vapor deposition\";s:8:\"\u0000*\u0000place\";s:5:\"Tokyo\";s:6:\"\u0000*\u0000pub\";s:35:\"Japanese journal of applied physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:128:\"A GaAs floated electron channel field effect transistor (FECFET) fabricated by selective metal organic chemical vapor deposition\";s:9:\"\u0000*\u0000jtitle\";s:35:\"Japanese journal of applied physics\";s:9:\"\u0000*\u0000stitle\";s:18:\"Jpn. j. appl. phys\";s:7:\"\u0000*\u0000date\";s:4:\"1991\";s:9:\"\u0000*\u0000volume\";s:2:\"30\";s:8:\"\u0000*\u0000issue\";s:3:\"12B\";s:8:\"\u0000*\u0000spage\";s:4:\"3828\";s:8:\"\u0000*\u0000epage\";s:4:\"3832\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0021-4922\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:13:\"CHANG-TAE KIM\";s:10:\"\u0000*\u0000aufirst\";s:0:\"\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:14:\"CHANG-HEE HONG\";i:1;s:13:\"YOUNG-SE KWON\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JJAPA5\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:1:\"1\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:128:\"A GaAs floated electron channel field effect transistor (FECFET) fabricated by selective metal organic chemical vapor deposition\";s:8:\"\u0000*\u0000place\";s:5:\"Tokyo\";s:6:\"\u0000*\u0000pub\";s:35:\"Japanese journal of applied physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:128:\"A GaAs floated electron channel field effect transistor (FECFET) fabricated by selective metal organic chemical vapor deposition\";s:9:\"\u0000*\u0000jtitle\";s:35:\"Japanese journal of applied physics\";s:9:\"\u0000*\u0000stitle\";s:18:\"Jpn. j. appl. phys\";s:7:\"\u0000*\u0000date\";s:4:\"1991\";s:9:\"\u0000*\u0000volume\";s:2:\"30\";s:8:\"\u0000*\u0000issue\";s:3:\"12B\";s:8:\"\u0000*\u0000spage\";s:4:\"3828\";s:8:\"\u0000*\u0000epage\";s:4:\"3832\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0021-4922\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:13:\"CHANG-TAE KIM\";s:10:\"\u0000*\u0000aufirst\";s:0:\"\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:14:\"CHANG-HEE HONG\";i:1;s:13:\"YOUNG-SE KWON\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JJAPA5\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:1:\"1\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:128:\"A GaAs floated electron channel field effect transistor (FECFET) fabricated by selective metal organic chemical vapor deposition\";s:8:\"\u0000*\u0000place\";s:5:\"Tokyo\";s:6:\"\u0000*\u0000pub\";s:35:\"Japanese journal of applied physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:128:\"A GaAs floated electron channel field effect transistor (FECFET) fabricated by selective metal organic chemical vapor deposition\";s:9:\"\u0000*\u0000jtitle\";s:35:\"Japanese journal of applied physics\";s:9:\"\u0000*\u0000stitle\";s:18:\"Jpn. j. appl. phys\";s:7:\"\u0000*\u0000date\";s:4:\"1991\";s:9:\"\u0000*\u0000volume\";s:2:\"30\";s:8:\"\u0000*\u0000issue\";s:3:\"12B\";s:8:\"\u0000*\u0000spage\";s:4:\"3828\";s:8:\"\u0000*\u0000epage\";s:4:\"3832\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0021-4922\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:13:\"CHANG-TAE KIM\";s:10:\"\u0000*\u0000aufirst\";s:0:\"\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:14:\"CHANG-HEE HONG\";i:1;s:13:\"YOUNG-SE KWON\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JJAPA5\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:1:\"1\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:128:\"A GaAs floated electron channel field effect transistor (FECFET) fabricated by selective metal organic chemical vapor deposition\";s:8:\"\u0000*\u0000place\";s:5:\"Tokyo\";s:6:\"\u0000*\u0000pub\";s:35:\"Japanese journal of applied physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:128:\"A GaAs floated electron channel field effect transistor (FECFET) fabricated by selective metal organic chemical vapor deposition\";s:9:\"\u0000*\u0000jtitle\";s:35:\"Japanese journal of applied physics\";s:9:\"\u0000*\u0000stitle\";s:18:\"Jpn. j. appl. phys\";s:7:\"\u0000*\u0000date\";s:4:\"1991\";s:9:\"\u0000*\u0000volume\";s:2:\"30\";s:8:\"\u0000*\u0000issue\";s:3:\"12B\";s:8:\"\u0000*\u0000spage\";s:4:\"3828\";s:8:\"\u0000*\u0000epage\";s:4:\"3832\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0021-4922\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:13:\"CHANG-TAE KIM\";s:10:\"\u0000*\u0000aufirst\";s:0:\"\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:14:\"CHANG-HEE HONG\";i:1;s:13:\"YOUNG-SE KWON\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JJAPA5\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:1:\"1\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:128:\"A GaAs floated electron channel field effect transistor (FECFET) fabricated by selective metal organic chemical vapor deposition\";s:8:\"\u0000*\u0000place\";s:5:\"Tokyo\";s:6:\"\u0000*\u0000pub\";s:35:\"Japanese journal of applied physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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