High-frequency operation of heavily carbon-doped Ga0.51In0.49P/GaAs surface-emitting light-emitting diodes grown by metalorganic molecular beam epitaxy
- Author
- DE LYON, T. J1 ; WOODALL, J. M; MCINTURFF, D. T; KIRCHNER, P. D; KASH, J. A; BATES, R. J. S; HODGSON, R. T; CARDONE, F
[1] IBM, Thomas J. Watson res. cent., res. div., Yorktown Heights NY 10598, United States - Source
Applied physics letters. 1991, Vol 59, Num 4, pp 402-404 ; ref : 18 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Composé organométallique Diode électroluminescente Dispositif optoélectronique Epitaxie Faisceau moléculaire Gallium Arséniure Gallium Indium Phosphure Mixte Hétérojonction
- Keyword (en)
- Organometallic compound Light emitting diode Optoelectronic device Epitaxy Molecular beam Gallium Arsenides Gallium Indium Phosphides Mixed Heterojunction
- Keyword (es)
- Compuesto organometálico Diodo electroluminescente Dispositivo optoelectrónico Epitaxia Haz molecular Galio Arseniuro Galio Indio Fosfuro Mixto Heterounión
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5181930
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1063/1.105444 
https://dx.doi.org/10.1063/1.105444
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:16:\"10.1063\/1.105444\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:151:\"High-frequency operation of heavily carbon-doped Ga0.51In0.49P\/GaAs surface-emitting light-emitting diodes grown by metalorganic molecular beam epitaxy\";s:9:\"\u0000*\u0000jtitle\";s:23:\"Applied physics letters\";s:9:\"\u0000*\u0000stitle\";s:16:\"Appl. phys. lett\";s:7:\"\u0000*\u0000date\";s:4:\"1991\";s:9:\"\u0000*\u0000volume\";s:2:\"59\";s:8:\"\u0000*\u0000issue\";s:1:\"4\";s:8:\"\u0000*\u0000spage\";s:3:\"402\";s:8:\"\u0000*\u0000epage\";s:3:\"404\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0003-6951\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"DE LYON\";s:10:\"\u0000*\u0000aufirst\";s:4:\"T. J\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:13:\"WOODALL, J. M\";i:1;s:15:\"MCINTURFF, D. T\";i:2;s:14:\"KIRCHNER, P. D\";i:3;s:10:\"KASH, J. A\";i:4;s:14:\"BATES, R. J. S\";i:5;s:13:\"HODGSON, R. T\";i:6;s:10:\"CARDONE, F\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"APPLAB\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:151:\"High-frequency operation of heavily carbon-doped Ga0.51In0.49P\/GaAs surface-emitting light-emitting diodes grown by metalorganic molecular beam epitaxy\";s:8:\"\u0000*\u0000place\";s:12:\"Melville, NY\";s:6:\"\u0000*\u0000pub\";s:29:\"American Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:16:\"10.1063\/1.105444\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:151:\"High-frequency operation of heavily carbon-doped Ga0.51In0.49P\/GaAs surface-emitting light-emitting diodes grown by metalorganic molecular beam epitaxy\";s:9:\"\u0000*\u0000jtitle\";s:23:\"Applied physics letters\";s:9:\"\u0000*\u0000stitle\";s:16:\"Appl. phys. lett\";s:7:\"\u0000*\u0000date\";s:4:\"1991\";s:9:\"\u0000*\u0000volume\";s:2:\"59\";s:8:\"\u0000*\u0000issue\";s:1:\"4\";s:8:\"\u0000*\u0000spage\";s:3:\"402\";s:8:\"\u0000*\u0000epage\";s:3:\"404\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0003-6951\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"DE LYON\";s:10:\"\u0000*\u0000aufirst\";s:4:\"T. J\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:13:\"WOODALL, J. M\";i:1;s:15:\"MCINTURFF, D. T\";i:2;s:14:\"KIRCHNER, P. D\";i:3;s:10:\"KASH, J. A\";i:4;s:14:\"BATES, R. J. S\";i:5;s:13:\"HODGSON, R. T\";i:6;s:10:\"CARDONE, F\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"APPLAB\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:151:\"High-frequency operation of heavily carbon-doped Ga0.51In0.49P\/GaAs surface-emitting light-emitting diodes grown by metalorganic molecular beam epitaxy\";s:8:\"\u0000*\u0000place\";s:12:\"Melville, NY\";s:6:\"\u0000*\u0000pub\";s:29:\"American Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:16:\"10.1063\/1.105444\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:16:\"10.1063\/1.105444\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:151:\"High-frequency operation of heavily carbon-doped Ga0.51In0.49P\/GaAs surface-emitting light-emitting diodes grown by metalorganic molecular beam epitaxy\";s:9:\"\u0000*\u0000jtitle\";s:23:\"Applied physics letters\";s:9:\"\u0000*\u0000stitle\";s:16:\"Appl. phys. lett\";s:7:\"\u0000*\u0000date\";s:4:\"1991\";s:9:\"\u0000*\u0000volume\";s:2:\"59\";s:8:\"\u0000*\u0000issue\";s:1:\"4\";s:8:\"\u0000*\u0000spage\";s:3:\"402\";s:8:\"\u0000*\u0000epage\";s:3:\"404\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0003-6951\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"DE LYON\";s:10:\"\u0000*\u0000aufirst\";s:4:\"T. J\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:13:\"WOODALL, J. M\";i:1;s:15:\"MCINTURFF, D. T\";i:2;s:14:\"KIRCHNER, P. D\";i:3;s:10:\"KASH, J. A\";i:4;s:14:\"BATES, R. J. S\";i:5;s:13:\"HODGSON, R. T\";i:6;s:10:\"CARDONE, F\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"APPLAB\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:151:\"High-frequency operation of heavily carbon-doped Ga0.51In0.49P\/GaAs surface-emitting light-emitting diodes grown by metalorganic molecular beam epitaxy\";s:8:\"\u0000*\u0000place\";s:12:\"Melville, NY\";s:6:\"\u0000*\u0000pub\";s:29:\"American Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:16:\"10.1063\/1.105444\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:151:\"High-frequency operation of heavily carbon-doped Ga0.51In0.49P\/GaAs surface-emitting light-emitting diodes grown by metalorganic molecular beam epitaxy\";s:9:\"\u0000*\u0000jtitle\";s:23:\"Applied physics letters\";s:9:\"\u0000*\u0000stitle\";s:16:\"Appl. phys. lett\";s:7:\"\u0000*\u0000date\";s:4:\"1991\";s:9:\"\u0000*\u0000volume\";s:2:\"59\";s:8:\"\u0000*\u0000issue\";s:1:\"4\";s:8:\"\u0000*\u0000spage\";s:3:\"402\";s:8:\"\u0000*\u0000epage\";s:3:\"404\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0003-6951\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"DE LYON\";s:10:\"\u0000*\u0000aufirst\";s:4:\"T. J\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:13:\"WOODALL, J. M\";i:1;s:15:\"MCINTURFF, D. T\";i:2;s:14:\"KIRCHNER, P. D\";i:3;s:10:\"KASH, J. A\";i:4;s:14:\"BATES, R. J. S\";i:5;s:13:\"HODGSON, R. T\";i:6;s:10:\"CARDONE, F\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"APPLAB\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:151:\"High-frequency operation of heavily carbon-doped Ga0.51In0.49P\/GaAs surface-emitting light-emitting diodes grown by metalorganic molecular beam epitaxy\";s:8:\"\u0000*\u0000place\";s:12:\"Melville, NY\";s:6:\"\u0000*\u0000pub\";s:29:\"American Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
