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Dynamics of coherent electron tunnelling in asymmetric coupled quantum wells under longitudinal magnetic fields

Author
CRUZ, H; HERNANDEZ-CABRERA, A; MUNOZ, A
Univ. La Laguna, dep. fisica fundamental experimental, 38204 La Laguna Tenerife, Spain
Source

Semiconductor science and technology. 1992, Vol 7, Num 3, pp 332-336 ; ref : 17 ref

CODEN
SSTEET
ISSN
0268-1242
Scientific domain
Electronics; Optics; Condensed state physics
Publisher
Institute of Physics, Bristol
Publication country
United Kingdom
Document type
Article
Language
English
Keyword (fr)
Aluminium Gallium Arséniure Mixte Champ magnétique Champ électrique Composé minéral Concentration porteur charge Décomposition niveau Effet tunnel Electron Etude théorique Gallium Arséniure Hauteur barrière Puits quantique Semiconducteur
Keyword (en)
Aluminium Gallium Arsenides Mixed Magnetic field Electric field Inorganic compound Charge carrier concentration Level splitting Tunnel effect Electrons Theoretical study Gallium Arsenides Barrier height Quantum well Semiconductor materials
Keyword (es)
Aluminio Galio Arseniuro Mixto Campo magnético Campo eléctrico Compuesto inorgánico Concentración portador carga Descomposición nivel Efecto túnel Electrón Estudio teórico Galio Arseniuro Altura barrera Pozo cuántico Semiconductor(material)
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C40 Electronic transport in interface structures

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
5192775

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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