An equipment model for polysilicon LPCVD
- Author
- SACHS, E; PRUEGER, G. H; GUERRIERI, R
MIT, Cambridge MA 02139, United States - Source
IEEE transactions on semiconductor manufacturing. 1992, Vol 5, Num 1, pp 3-13 ; ref : 24 ref
- ISSN
- 0894-6507
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Conception circuit Dépôt chimique phase vapeur Etude comparative Etude théorique Modélisation Méthode différence finie Performance Polycristal Silicium
- Keyword (en)
- Circuit design Chemical vapor deposition Comparative study Theoretical study Modeling Finite difference method Performance Polycrystal Silicon
- Keyword (es)
- Concepción circuito Depósito químico fase vapor Estudio comparativo Estudio teórico Modelización Método diferencia finita Rendimiento Policristal Silicio
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5213666
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/66.121971 
https://dx.doi.org/10.1109/66.121971
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