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Photoionization energy variation among three types of as-stabilized GaAs(001) 2×4 surfaces

Author
TSUDA, H; MIZUTANI, T
NEC Corp., microelectronics res. laboratories, Tsukuba, Ibaraki 305, Japan
Source

Applied physics letters. 1992, Vol 60, Num 13, pp 1570-1572 ; ref : 13 ref

CODEN
APPLAB
ISSN
0003-6951
Scientific domain
Crystallography; Electronics; Optics; Condensed state physics
Publisher
American Institute of Physics, Melville, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Composé minéral Emission photoélectronique Etude expérimentale Forme alpha Forme bêta Forme gamma Gallium Arséniure Potentiel ionisation Semiconducteur Surface
Keyword (en)
Inorganic compound Photoelectron emission Experimental study Alpha form Beta form Gamma form Gallium Arsenides Ionization potential Semiconductor materials Surface
Keyword (es)
Compuesto inorgánico Emisión fotoelectrónica Estudio experimental Forma alfa Forma beta Forma gama Galio Arseniuro Potencial de ionización Semiconductor(material) Superficie
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70I Electron and ion emission by liquids and solids; impact phenomena / 001B70I60 Photoemission and photoelectron spectra

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
5227744

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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