Optoelectronic adaptive neuro-device
- Author
- YONEZU, H; KANAMORI, K; TSUJI, K; HIMENO, T; TAKANO, Y; PAK, K
Toyohashi univ. technology, dep. electrical electronic eng., Tempaku-cho, Toyohashi-shi 441, Japan - Source
Electronics Letters. 1992, Vol 28, Num 8, pp 715-717 ; ref : 5 ref
- CODEN
- ELLEAK
- ISSN
- 0013-5194
- Scientific domain
- Electronics; Optics; Telecommunications
- Publisher
- Institution of Electrical Engineers, London
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Circuit adaptatif Circuit intégré Coefficient pondération Mémoire EEPROM Optoélectronique Réseau neuronal Synapse Effet tunnel Fowler Nordheim
- Keyword (en)
- Adaptive circuit Integrated circuit Weighting coefficient EEPROM memory Optoelectronics Neural network Synapse Fowler Nordheim tunnelling
- Keyword (es)
- Circuito adaptativo Circuito integrado Coeficiente ponderación Memoria EEPROM Optoelectrónica Red neuronal Sinapsis
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03G Electric, optical and optoelectronic circuits / 001D03G02 Circuit properties / 001D03G02C Optical and optoelectronic circuits / 001D03G02C2 Integrated optoelectronics. Optoelectronic circuits
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5229727
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1049/el:19920453 
https://dx.doi.org/10.1049/el:19920453
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