Electrical and structural properties of low resistivity tin-doped indium oxide films
- Author
- SHIGESATO, Y; TAKAKI, S; HARANOH, T
Asahi Glass Co. Ltd, advanced glass R&D cent., Yokohama-shi, Kanagawa 221, Japan - Source
Journal of applied physics. 1992, Vol 71, Num 7, pp 3356-3364 ; ref : 24 ref
- CODEN
- JAPIAU
- ISSN
- 0021-8979
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics; Physics
- Publisher
- American Institute of Physics, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Composé minéral Concentration porteur charge Conductivité électrique Couche mince Diffraction RX Etain Etude expérimentale Evaporation bombardement électronique Grosseur grain Indium Oxyde Microstructure Mobilité porteur charge Plasma Pulvérisation cathodique Recuit thermique
- Keyword (en)
- Inorganic compound Charge carrier concentration Electrical conductivity Thin film X ray diffraction Tin Experimental study Electron bombardment evaporation Grain size Indium Oxides Microstructure Charge carrier mobility Plasma Cathodic sputtering Thermal annealing
- Keyword (es)
- Compuesto inorgánico Concentración portador carga Conductividad eléctrica Capa fina Difracción RX Estaño Estudio experimental Evaporación bombardeo electrónico Grosor grano Indio Óxido Microestructura Movilidad portador carga Plasma Pulverización catódica Recocido térmico
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C50 Electronic transport phenomena in thin films and low-dimensional structures
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5230932
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.350931 
https://dx.doi.org/10.1063/1.350931
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