A resistive-gate Al0.3Ga0.7As/GaAs 2DEG CCD with high charge-transfer efficiency at 1 GHz
- Author
- SONG, J.-I; ROSSI, D. V; XIN, S; WANG, W. I; FOSSUM, E. R
Columbia univ., dep. electrical eng., New York NY 10027, United States - Source
I.E.E.E. transactions on electron devices. 1991, Vol 38, Num 4, pp 930-932 ; ref : 8 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium Gallium Arséniure Mixte Dispositif transfert charge Dopage modulé Gallium Arséniure Gaz électron Ligne hyperfréquence Ligne retard Rendement élevé 32 étages 4 phases
- Keyword (en)
- Aluminium Gallium Arsenides Mixed Charge coupled device Modulation doping Gallium Arsenides Electron gas Microwave line Delay line High efficiency
- Keyword (es)
- Aluminio Galio Arseniuro Mixto Dispositivo transferencia carga Doping modulado Galio Arseniuro Gas electrón Línea hiperfrecuencia Línea retardo Rendimiento elevado
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F07 Charge transfer devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5233239
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/16.75226 
https://dx.doi.org/10.1109/16.75226
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