A numerical model of GaAs MESFET's including energy balance for microwave applications
- Author
- YOGANATHAN, S; BANERJEE, S; ITOH, T; SHICHIJO, H; EL-GHAZALY, S
Univ. Texas Austin, dep. electrical computer eng., Austin TX 78712-1084, United States - Source
IEEE microwave and guided wave letters. 1991, Vol 1, Num 7, pp 175-177 ; ref : 4 ref
- Document type
- Article
- Language
- English
- Keyword (fr)
- Dispositif semiconducteur Energie Equation Poisson Equation différentielle Etude théorique Hyperfréquence Performance Simulation ordinateur Transistor effet champ barrière Schottky Transistor effet champ
- Keyword (en)
- Semiconductor device Energy Poisson equation Differential equation Theoretical study Microwave Performance Computer simulation Metal semiconductor field effect transistor Field effect transistor
- Keyword (es)
- Dispositivo semiconductor Energía Ecuación Poisson Ecuación diferencial Estudio teórico Hiperfrecuencia Rendimiento Simulación computadora Transistor efecto campo barrera Schottky Transistor efecto campo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5240656
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/75.84574 
https://dx.doi.org/10.1109/75.84574
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