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Photoreflectance study of photovoltage effects in GaAs diode structures

Author
AIRAKSINEN, V. L; LIPSANEN, H. K
Electron physics lab., 02150 Espoo, Finland
Source

Applied physics letters. 1992, Vol 60, Num 17, pp 2110-2112 ; ref : 9 ref

CODEN
APPLAB
ISSN
0003-6951
Scientific domain
Crystallography; Electronics; Optics; Condensed state physics
Publisher
American Institute of Physics, Melville, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Basse température Champ électrique Composé minéral Diode Effet Franz Keldysh Etude expérimentale Gallium Arséniure Haute température Réflexion optique Semiconducteur Température
Keyword (en)
Low temperature Electric field Inorganic compound Diode Franz Keldysh effect Experimental study Gallium Arsenides High temperature Optical reflection Semiconductor materials Temperature
Keyword (es)
Baja temperatura Campo eléctrico Compuesto inorgánico Diodo Efecto Franz Keldysh Estudio experimental Galio Arseniuro Alta temperatura Reflexión óptica Semiconductor(material) Temperatura
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H66 Optical properties of specific thin films

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
5250844

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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