Laser-assisted chemical beam epitaxy for selective growth
- Author
- SUGIURA, H; IGA, R; YAMADA, T
NTT Opto-Electronics Laboratories, Atsugi-shi Kanagawa 243-01, Japan - Conference title
- International conference on chemical beam epitaxy and related growth techniques (ICCBE-3)
- Conference name
- International conference on chemical beam epitaxy and related growth techniques (ICCBE-3) (ICCBE-3) (3 ; Oxford 1991-09-01)
- Author (monograph)
- DAVIES, G. J (Editor)1 ; FOORD, J. S (Editor); TSANG, W. T (Editor)
Univ. Oxford, United Kingdom (Funder/Sponsor)
[1] Britisch Telecom Research Laboratories, Ipswich, United Kingdom - Source
Journal of crystal growth. 1992, Vol 120, Num 1-4, pp 389-394 ; ref : 20 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5252330
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0022-0248(92)90423-G 
https://dx.doi.org/10.1016/0022-0248(92)90423-G
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