Residue-free reactive ion etching of β-SiC in CHF3/O2 with H2 additive
- Author
- STECKL, A. J; YIH, P. H
Univ. Cincinnati, dep. electrical computer eng., nanoelectronics lab., Cincinnati OH 45221-0030, United States - Source
Applied physics letters. 1992, Vol 60, Num 16, pp 1966-1968 ; ref : 11 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Attaque chimique Composé minéral Couche mince Effet composition Etude expérimentale Forme bêta Gradin Gravure faisceau ionique Hétérojonction Microscopie Semiconducteur Silicium Carbure Spectrométrie Auger Traitement surface
- Keyword (en)
- Chemical etching Inorganic compound Thin film Composition effect Experimental study Beta form Step Ion beam etching Heterojunction Microscopy Semiconductor materials Silicon Carbides Auger electron spectrometry Surface treatment
- Keyword (es)
- Ataque químico Compuesto inorgánico Capa fina Efecto composición Estudio experimental Forma beta Peldaño Grabado haz iónico Heterounión Microscopía Semiconductor(material) Silicio Carburo Espectrometría Auger Tratamiento superficie
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35B Surface structure and topography
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5253548
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.107113 
https://dx.doi.org/10.1063/1.107113
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