Peak-to-valley current ratios as high as 50:1 at room temperature in pseudomorphic In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes
- Author
- SMET, J. H; BROEKAERT, T. P. E; FONSTAD, C. G
MIT, cent. materials sci. eng., dep. electrical eng. computer sci., Cambridge MA 02139, United States - Source
Journal of applied physics. 1992, Vol 71, Num 5, pp 2475-2477 ; ref : 11 ref
- CODEN
- JAPIAU
- ISSN
- 0021-8979
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics; Physics
- Publisher
- American Institute of Physics, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium Arséniure Caractéristique courant tension Composé III-V Diode Dispositif effet tunnel Effet tunnel résonnant Epitaxie Faisceau moléculaire Gallium Indium Arséniure Mixte Indium Arséniure Pseudomorphique Rapport pic vallée
- Keyword (en)
- Aluminium Arsenides Voltage current curve III-V compound Diode Tunneling device Resonant tunnel effect Epitaxy Molecular beam Gallium Indium Arsenides Mixed Indium Arsenides Pseudomorphic Peak valley ratio
- Keyword (es)
- Aluminio Arseniuro Característica corriente tensión Compuesto III-V Diodo Dispositivo efecto túnel Efecto túnel resonante Epitaxia Haz molecular Galio Indio Arseniuro Mixto Indio Arseniuro
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F03 Diodes
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5254881
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.351085 
https://dx.doi.org/10.1063/1.351085
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