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On the transmission coefficient of graded composition GaAs/AlxGa1-xAs heterojunctions under an electric field

Author
FREIRE, V. N; FARIAS, G. A; AUTO, M. M
UFC, dep. fisica, Ceará, Brazil
Source

Journal of applied physics. 1992, Vol 71, Num 8, pp 4076-4078 ; ref : 11 ref

CODEN
JAPIAU
ISSN
0021-8979
Scientific domain
Crystallography; Electronics; Optics; Condensed state physics; Physics
Publisher
American Institute of Physics, Woodbury, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Aluminium Gallium Arséniure Mixte Champ électrique Composé minéral Equation Schrödinger Etude théorique Gallium Arséniure Hétérojonction Phénomène transport Semiconducteur
Keyword (en)
Aluminium Gallium Arsenides Mixed Electric field Inorganic compound Schrödinger equation Theoretical study Gallium Arsenides Heterojunction Transport process Semiconductor materials
Keyword (es)
Aluminio Galio Arseniuro Mixto Campo eléctrico Compuesto inorgánico Ecuación Schrödinger Estudio teórico Galio Arseniuro Heterounión Fenómeno transporte Semiconductor(material)
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C40 Electronic transport in interface structures

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
5255003

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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