Photoluminescence from AlxGa1-xAs/GaAs quantum wells quenched by intense far-infrared radiation
- Author
- QUINLAN, S. M; NIKROO, A; SHERWIN, M. S; SUNDARAM, M; GOSSARD, A. C
Univ. California, dep. physics, Santa Barbara CA 93106, United States - Source
Physical review. B, Condensed matter. 1992, Vol 45, Num 16, pp 9428-9431 ; ref : 14 ref
- CODEN
- PRBMDO
- ISSN
- 0163-1829
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- American Institute of Physics, Woodbury, NY
/
American Physical Society, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium Gallium Arséniure Mixte Composé minéral Durée vie Déclin luminescence Etude expérimentale Exciton Gallium Arséniure Ionisation choc Paire électron trou Photoluminescence Porteur chaud Porteur majoritaire Processus n phonons Puits quantique multiple Rayonnement IR lointain Semiconducteur Température
- Keyword (en)
- Aluminium Gallium Arsenides Mixed Inorganic compound Lifetime Luminescence decay Experimental study Exciton Gallium Arsenides Impact ionization Electron hole pair Photoluminescence Hot carrier Majority carrier Multiphonon process Multiple quantum well Far infrared radiation Semiconductor materials Temperature
- Keyword (es)
- Aluminio Galio Arseniuro Mixto Compuesto inorgánico Tiempo vida Decadencia luminiscencia Estudio experimental Excitón Galio Arseniuro Ionización choque Par electrón hueco Fotoluminiscencia Portador caliente Portador mayoritario Proceso n fonones Pozo cuántico múltiple Radiación infrarroja lejana Semiconductor(material) Temperatura
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H66 Optical properties of specific thin films
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5255037
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1103/PhysRevB.45.9428 
https://dx.doi.org/10.1103/PhysRevB.45.9428
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