Low-temperature furnace-grown reoxidized nitrided oxide gate dielectrics as a barrier to boron penetration
- Author
- FANG, H; KRISCH, K. S; GROSS, B. J; SODINI, C. G; CHUNG, J; ANTONIADIS, D. A
Massachusetts inst. technology, dep. electrical eng. computer sci., Cambridge MA 02139, United States - Source
IEEE electron device letters. 1992, Vol 13, Num 4, pp 217-219 ; ref : 15 ref
- CODEN
- EDLEDZ
- ISSN
- 0741-3106
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Bore Diffusion molécule Diélectrique Etude expérimentale Nitrure Oxyde Polycristal Porteur chaud Silicium Technologie MOS Température
- Keyword (en)
- Boron Molecule scattering Dielectric materials Experimental study Nitrides Oxides Polycrystal Hot carrier Silicon MOS technology Temperature
- Keyword (es)
- Boro Difusión molécula Dieléctrico Estudio experimental Nitruro Óxido Policristal Portador caliente Silicio Tecnología MOS Temperatura
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F02 Compound structure devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5277112
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/55.145026 
https://dx.doi.org/10.1109/55.145026
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