An in-situ ellipsometry study of amorphous silicon/amorphous germanium multilayers
- Autor
- CHU, V; FANG, M; DREVILLON, B
CNRS, ecole polytech., lab. physique interfaces couches minces, Palaiseau 91128, France - Fuente
Journal of applied physics. 1991, Vol 69, Num 1, pp 13-18 ; ref : 24 ref
- CODEN
- JAPIAU
- ISSN
- 0021-8979
- Campo Científico
- Crystallography; Electronics; Optics; Condensed state physics; Physics
- Editor
- American Institute of Physics, Woodbury, NY
- País de la publicación
- United States
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave (fr)
- Couche multiple Ellipsométrie Etat amorphe Germanium Hydrogène Hydrogène Silicium Silicium
- Palabra clave (in)
- Multiple layer Ellipsometry Amorphous state Germanium Hydrogen Hydrogen Silicon Silicon
- Palabra clave (es)
- Capa múltiple Elipsometría Estado amorfo Germanio Hidrógeno Hidrógeno Silicio Silicio
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
- Disciplina
- Electronics
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 5280863
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.347750 
https://dx.doi.org/10.1063/1.347750
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