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Polarization raman microprobe analysis of laser melting and etching in silicon

Author
HUA TANG; HERMAN, I. P
Columbia univ., dep. applied physics, microelectronics sci. laboratories, New York NY 10027, United States
Source

Journal of applied physics. 1992, Vol 71, Num 7, pp 3492-3505 ; ref : 45 ref

CODEN
JAPIAU
ISSN
0021-8979
Scientific domain
Crystallography; Electronics; Optics; Condensed state physics; Physics
Publisher
American Institute of Physics, Woodbury, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Atmosphère contrôlée Couche mince Décroissance cristalline Etude expérimentale Faisceau laser Fusion Germanium Pastille électronique Semiconducteur Silicium Spectre Raman
Keyword (en)
Controlled atmosphere Thin film Inverse crystal growth Experimental study Laser beam Melting Germanium Wafer Semiconductor materials Silicon Raman spectrum
Keyword (es)
Atmósfera controlada Capa fina Decrecimiento cristalino Estudio experimental Haz láser Fusión Germanio Pastilla electrónica Semiconductor(material) Silicio Espectro Raman
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35G Mechanical and acoustical properties; adhesion

Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H45 Solid-fluid interfaces

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
5282381

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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