A thermochemical model for the plasma etching of aluminum in BCl3/Cl2 and BBr3/Br2
- Author
- MCNEVIN, S. C
AT&T Bell Laboratories, Murray Hill NJ 07974, United States - Source
Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1990, Vol 8, Num 6, pp 1212-1222 ; ref : 9 ref
- CODEN
- JVTBD9
- ISSN
- 0734-211X
- Scientific domain
- Electronics; Computer science
- Publisher
- American Institute of Physics, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium Bore Brome Bore Chlore Gravure plasma Pastille électronique Propriété thermochimique Prédiction Température
- Keyword (en)
- Aluminium Boron Bromine Boron Chlorine Plasma etching Wafer Thermochemical properties Prediction Temperature
- Keyword (es)
- Aluminio Boro Bromo Boro Cloro Grabado plasma Pastilla electrónica Propiedad termoquímica Predicción Temperatura
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03C Materials
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5292388
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1116/1.584897 
https://dx.doi.org/10.1116/1.584897
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