Optimization of thin-film resistive-gate and capacitive-gate GaAs charge-coupled devices
- Author
- ULA, N1 ; COOPER, G. A; DAVIDSON, J. C; SWIERKOWSKI, S.P; HUNT, C. E
[1] Univ. California at Davis, dep. electrical eng. computer sci., Davis CA 94550, United States - Source
I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 5, pp 1032-1040 ; ref : 38 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Analyse sensibilité Coefficient transfert Compatibilité Dispositif couche mince Dispositif semiconducteur Dispositif transfert charge Dopage Epaisseur couche Gallium Arséniure Horloge Performance Simulation ordinateur Transistor effet champ barrière Schottky
- Keyword (en)
- Sensitivity analysis Transfer efficiency Compatibility Thin film device Semiconductor device Charge coupled device Doping Layer thickness Gallium Arsenides Clock Performance Computer simulation Metal semiconductor field effect transistor
- Keyword (es)
- Análisis sensibilidad Coeficiente transferencia Compatibilidad Dispositivo capa delgada Dispositivo semiconductor Dispositivo transferencia carga Doping Espesor capa Galio Arseniuro Reloj Rendimiento Simulación computadora Transistor efecto campo barrera Schottky
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F07 Charge transfer devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5298441
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/16.129079 
https://dx.doi.org/10.1109/16.129079
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