Passivation of (111) Si/SiO2 interface by fluorine
- Author
- WANG, X. W; MA, T. P
Yale univ., cent. microelectronics materials structures, dep. electrical eng., New Haven CT 06520-2157, United States - Source
Applied physics letters. 1992, Vol 60, Num 21, pp 2634-2636 ; ref : 5 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Atmosphère contrôlée Azote Fluorure Bande interdite Caractéristique capacité tension Composé minéral Diélectrique Défaut Electronégativité Etat électronique interface Etude expérimentale Fréquence Interface solide solide Irradiation Niveau défaut Passivation Préparation Rayon X Recuit thermique Semiconducteur Silicium Oxyde Silicium Structure MOS
- Keyword (en)
- Controlled atmosphere Nitrogen Fluorides Energy gap Voltage capacity curve Inorganic compound Dielectric materials Defect Electronegativity Interface electron state Experimental study Frequency Solid solid interface Irradiation Defect level Passivation Preparation X ray Thermal annealing Semiconductor materials Silicon Oxides Silicon MOS structure
- Keyword (es)
- Atmósfera controlada Nitrógeno Fluoruro Banda prohibida Característica capacidad tensión Compuesto inorgánico Dieléctrico Defecto Electronegatividad Estado electrónico interfase Estudio experimental Frecuencia Interfase sólido sólido Irradiación Pasivación Preparación Rayos X Recocido térmico Semiconductor(material) Silicio Óxido Silicio Estructura MOS
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C20 Surface and interface electron states
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5298709
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.106878 
https://dx.doi.org/10.1063/1.106878
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