Optical determination of the diffusion length and of the surface recombination velocity of electrons in p-type GaAs films
- Author
- DZHIOEV, R. I; KAVOKIN, K. V; TYBULEWICZ, A (Translator)
Acad. sci. USSR, A. F. Ioffe physicotech. inst., Leningrad, Ussr - Source
Soviet physics. Solid state. 1991, Vol 33, Num 10, pp 1654-1656 ; ref : 11 ref
- ISSN
- 0038-5654
- Scientific domain
- Condensed state physics
- Publisher
- American Institute of Physics, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Composé minéral Durée vie Epaisseur Equation diffusion Etude expérimentale Fréquence Gallium Arséniure Longueur diffusion Modulation Méthode étude Photoluminescence Phénomène transport Polarisation rayonnement Porteur charge Recombinaison porteur charge Recombinaison superficielle Semiconducteur
- Keyword (en)
- Inorganic compound Lifetime Thickness Diffusion equation Experimental study Frequency Gallium Arsenides Diffusion length Modulation Investigation method Photoluminescence Transport process Radiation polarization Charge carrier Charge carrier recombination Surface recombination Semiconductor materials
- Keyword (es)
- Compuesto inorgánico Tiempo vida Espesor Ecuación difusión Estudio experimental Frecuencia Galio Arseniuro Longitud difusión Modulación Método estudio Fotoluminiscencia Fenómeno transporte Polarización radiación Portador carga Recombinación portador carga Recombinación superficial Semiconductor(material)
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B20 Conductivity phenomena in semiconductors and insulators / 001B70B20F Low-field transport and mobility; piezoresistance
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5298782
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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