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1MHz dielectric constants of phosphosilicate glass films chemically vapour-deposited in the SiH4-PH3-O2-N2 system at low temperature

Author
PAVELESCU, C; SERGHI, D1
[1] R&D cent. electronic components, 72996 Bucharest, Romania
Source

Journal of materials science. 1992, Vol 27, Num 10, pp 2631-2635 ; ref : 24 ref

CODEN
JMTSAS
ISSN
0022-2461
Scientific domain
Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics; Polymers, paint and wood industries
Publisher
Springer, Heidelberg
Publication country
Germany
Document type
Article
Language
English
Keyword (fr)
Composition chimique Composé minéral Conductivité électrique Constante diélectrique Couche mince Dépôt chimique phase vapeur Etude expérimentale Phosphosilicate Recuit thermique Verre
Keyword (en)
Chemical composition Inorganic compound Electrical conductivity Permittivity Thin film Chemical vapor deposition Experimental study Phosphosilicates Thermal annealing Glass
Keyword (es)
Composición química Compuesto inorgánico Conductividad eléctrica Constante dieléctrica Capa fina Depósito químico fase vapor Estudio experimental Fosfosilicato Recocido térmico Vidrio
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70G Dielectrics, piezoelectrics, and ferroelectrics and their properties / 001B70G22 Dielectric properties of solids and liquids / 001B70G22C Permittivity (dielectric function)

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
5299530

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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