A search for asymmetry in the dissipation between the current entry and exit points in the quantum Hall regime of a silicon MOSFET
- Author
- OUALI, F. F; CHALLIS, L. J; COOPER, J
Univ. Nottingham, physics dep., Nottingham NG7 2RD, United Kingdom - Source
Semiconductor science and technology. 1992, Vol 7, Num 4, pp 608-611 ; ref : 12 ref
- CODEN
- SSTEET
- ISSN
- 0268-1242
- Scientific domain
- Electronics; Optics; Condensed state physics
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Effet Hall quantique Silicium Transistor MOS Transistor effet champ
- Keyword (en)
- Quantum Hall effect Silicon MOS transistor Field effect transistor
- Keyword (es)
- Efecto Hall cuántico Silicio Transistor MOS Transistor efecto campo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5302021
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0268-1242/7/4/030 
https://dx.doi.org/10.1088/0268-1242/7/4/030
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