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Polymorphic stability of AlAs/GaAs superlattices at high pressure

Author
CUI, L. J1 ; VENKATESWARAN, U. D; WEINSTEIN, B. A; CHAMBERS, F. A
[1] SUNY at Buffalo, dep. physical, Buffalo NY 14260, United States
Source

Physical review. B, Condensed matter. 1992, Vol 45, Num 16, pp 9248-9265 ; ref : 55 ref

CODEN
PRBMDO
ISSN
0163-1829
Scientific domain
Crystallography; Metallurgy, welding; Condensed state physics
Publisher
American Institute of Physics, Woodbury, NY / American Physical Society, Woodbury, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Aluminium Arséniure Composé minéral Couche mince Epaisseur Etude expérimentale Gallium Arséniure Pression Semiconducteur Spectre Raman Stabilité thermodynamique Superréseau Transformation phase
Keyword (en)
Aluminium Arsenides Inorganic compound Thin film Thickness Experimental study Gallium Arsenides Pressure Semiconductor materials Raman spectrum Thermodynamic stability Superlattice Phase transformation
Keyword (es)
Aluminio Arseniuro Compuesto inorgánico Capa fina Espesor Estudio experimental Galio Arseniuro Presión Semiconductor(material) Espectro Raman Estabilidad termodinámica Superred Transformación fase
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H65 Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
5316965

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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