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Piezoresistivity in vapor-deposited diamond films

Author
ASLAM, M1 ; TAHER, I; MASOOD, A; TAMOR, M. A; POTTER, T. J
[1] Michigan state univ., dep. electrical eng., East Lansing MI 48824-1226, United States
Source

Applied physics letters. 1992, Vol 60, Num 23, pp 2923-2925 ; ref : 12 ref

CODEN
APPLAB
ISSN
0003-6951
Scientific domain
Crystallography; Electronics; Optics; Condensed state physics
Publisher
American Institute of Physics, Melville, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Basse température Bore Centre accepteur Concentration impureté Contrainte traction Couche épitaxique Diamant Etude expérimentale Facteur jauge Homoépitaxie Microdéformation Piézorésistivité Polycristal Température
Keyword (en)
Low temperature Boron Acceptor center Impurity density Tensile stress Epitaxial film Diamond Experimental study Gauge factor Homoepitaxy Microdeformation Piezoresistivity Polycrystal Temperature
Keyword (es)
Baja temperatura Boro Centro aceptor Concentración impureza Tensión traccíon Capa epitáxica Diamante Estudio experimental Factor galga Homoepitaxia Microdeformatión Piezoresistividad Policristal Temperatura
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B20 Conductivity phenomena in semiconductors and insulators / 001B70B20F Low-field transport and mobility; piezoresistance

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
5335223

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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