Oxidation kinetics of SiC deposited from CH3SiCl3/H2 under CVI conditions
- Author
- FILIPUZZI, L1 ; NASLAIN, R; JAUSSAUD, C2
[1] CNRS, lab. composites thermostructuraux, 33600 Pessac, France
[2] Ceng Leti, 38041 Grenoble, France - Source
Journal of materials science. 1992, Vol 27, Num 12, pp 3330-3334 ; ref : 20 ref
- Publisher
- Springer, Heidelberg
- Publication country
- Germany
- Document type
- Article
- Language
- English
- Keyword (fr)
- Cinétique Céramique sans oxyde Céramique thermomécanique Dépôt chimique phase vapeur Etude expérimentale Infiltration Oxydation Propriété chimique Silicium Carbure
- Keyword (en)
- Kinetics Non oxide ceramics Structural ceramic Chemical vapor deposition Experimental study Infiltration Oxidation Chemical properties Silicon Carbides
- Keyword (es)
- Cinética Cerámica sin óxido Cerámica termomecánica Depósito químico fase vapor Estudio experimental Infiltración Oxidación Propiedad química Silicio Carburo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D08 Chemical industry and chemicals / 001D08B Building materials. Ceramics. Glasses / 001D08B04 Ceramic industries / 001D08B04C Technical ceramics / 001D08B04C3 Structural ceramics
- Discipline
- Chemical and parachemical industries
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5335972
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/BF01116033 
https://dx.doi.org/10.1007/BF01116033
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