Two dimensional profiling using secondary ion mass spectrometry
- Author
- DOWSETT, M. G; COOKE, G. A
Univ. Warwick, dep. physics, advanced SIMS profects, Coventry West Midlands CV4 7AL, United Kingdom - Conference title
- International workshop on th measurement and characterization of ultra-shallow doping profiles in semiconductors
- Conference name
- International workshop on the measurement and characterization of ultra-shallow doping profiles in semiconductors (1 ; Research Triangle Park NC 1991-03-18)
- Author (monograph)
- OSBURN, C. M (Editor)1 ; MCGUIRE, G. E (Editor)
AMERICAN VACUUM SOCIETY, New York NU, United States (Funder/Sponsor)
MCNC. Center for Microelectronics, Research Triangle Park NC, United States (Funder/Sponsor)
SEMICONDUCTOR RESEARCH CORPORATION (Funder/Sponsor)
NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY (Funder/Sponsor)
WORTHERN TELECOM ELECTRONICS (Funder/Sponsor)
[1] MCNC, cent. microelectronics, Research Triangle Park NC 27709, United States - Source
Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 353-357 ; ref : 14 ref
- CODEN
- JVTBD9
- ISSN
- 0734-211X
- Scientific domain
- Electronics; Computer science
- Publisher
- American Institute of Physics, New York, NY
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72S Impurities: concentration, distribution, and gradients
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5340161
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:63:\"Two dimensional profiling using secondary ion mass spectrometry\";s:9:\"\u0000*\u0000jtitle\";s:86:\"Journal of vacuum science and technology. B. Microelectronics processing and phenomena\";s:9:\"\u0000*\u0000stitle\";s:56:\"J. vac. sci. technol., B, Microelectron. process. phenom\";s:7:\"\u0000*\u0000date\";s:4:\"1992\";s:9:\"\u0000*\u0000volume\";s:2:\"10\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:3:\"353\";s:8:\"\u0000*\u0000epage\";s:3:\"357\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0734-211X\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"DOWSETT\";s:10:\"\u0000*\u0000aufirst\";s:4:\"M. G\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:11:\"COOKE, G. A\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JVTBD9\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:112:\"International workshop on th measurement and characterization of ultra-shallow doping profiles in semiconductors\";s:8:\"\u0000*\u0000title\";s:63:\"Two dimensional profiling using secondary ion mass spectrometry\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:29:\"American Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:63:\"Two dimensional profiling using secondary ion mass spectrometry\";s:9:\"\u0000*\u0000jtitle\";s:86:\"Journal of vacuum science and technology. B. Microelectronics processing and phenomena\";s:9:\"\u0000*\u0000stitle\";s:56:\"J. vac. sci. technol., B, Microelectron. process. phenom\";s:7:\"\u0000*\u0000date\";s:4:\"1992\";s:9:\"\u0000*\u0000volume\";s:2:\"10\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:3:\"353\";s:8:\"\u0000*\u0000epage\";s:3:\"357\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0734-211X\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"DOWSETT\";s:10:\"\u0000*\u0000aufirst\";s:4:\"M. G\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:11:\"COOKE, G. A\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JVTBD9\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:112:\"International workshop on th measurement and characterization of ultra-shallow doping profiles in semiconductors\";s:8:\"\u0000*\u0000title\";s:63:\"Two dimensional profiling using secondary ion mass spectrometry\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:29:\"American Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:63:\"Two dimensional profiling using secondary ion mass spectrometry\";s:9:\"\u0000*\u0000jtitle\";s:86:\"Journal of vacuum science and technology. B. Microelectronics processing and phenomena\";s:9:\"\u0000*\u0000stitle\";s:56:\"J. vac. sci. technol., B, Microelectron. process. phenom\";s:7:\"\u0000*\u0000date\";s:4:\"1992\";s:9:\"\u0000*\u0000volume\";s:2:\"10\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:3:\"353\";s:8:\"\u0000*\u0000epage\";s:3:\"357\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0734-211X\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"DOWSETT\";s:10:\"\u0000*\u0000aufirst\";s:4:\"M. G\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:11:\"COOKE, G. A\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JVTBD9\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:112:\"International workshop on th measurement and characterization of ultra-shallow doping profiles in semiconductors\";s:8:\"\u0000*\u0000title\";s:63:\"Two dimensional profiling using secondary ion mass spectrometry\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:29:\"American Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:63:\"Two dimensional profiling using secondary ion mass spectrometry\";s:9:\"\u0000*\u0000jtitle\";s:86:\"Journal of vacuum science and technology. B. Microelectronics processing and phenomena\";s:9:\"\u0000*\u0000stitle\";s:56:\"J. vac. sci. technol., B, Microelectron. process. phenom\";s:7:\"\u0000*\u0000date\";s:4:\"1992\";s:9:\"\u0000*\u0000volume\";s:2:\"10\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:3:\"353\";s:8:\"\u0000*\u0000epage\";s:3:\"357\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0734-211X\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"DOWSETT\";s:10:\"\u0000*\u0000aufirst\";s:4:\"M. G\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:11:\"COOKE, G. A\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JVTBD9\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:112:\"International workshop on th measurement and characterization of ultra-shallow doping profiles in semiconductors\";s:8:\"\u0000*\u0000title\";s:63:\"Two dimensional profiling using secondary ion mass spectrometry\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:29:\"American Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:63:\"Two dimensional profiling using secondary ion mass spectrometry\";s:9:\"\u0000*\u0000jtitle\";s:86:\"Journal of vacuum science and technology. B. Microelectronics processing and phenomena\";s:9:\"\u0000*\u0000stitle\";s:56:\"J. vac. sci. technol., B, Microelectron. process. phenom\";s:7:\"\u0000*\u0000date\";s:4:\"1992\";s:9:\"\u0000*\u0000volume\";s:2:\"10\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:3:\"353\";s:8:\"\u0000*\u0000epage\";s:3:\"357\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0734-211X\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"DOWSETT\";s:10:\"\u0000*\u0000aufirst\";s:4:\"M. G\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:11:\"COOKE, G. A\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JVTBD9\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:112:\"International workshop on th measurement and characterization of ultra-shallow doping profiles in semiconductors\";s:8:\"\u0000*\u0000title\";s:63:\"Two dimensional profiling using secondary ion mass spectrometry\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:29:\"American Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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