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A reflectometric study of the reaction between Si and WF6 during W-LPCVD on Si and of the renucleation during the H2 reduction of WF6

Author
HOLLEMAN, J; HASPER, A; MIDDELHOEK, J
Univ. Twente, Enschede 7500 AE, Netherlands
Source

Journal of the Electrochemical Society. 1991, Vol 138, Num 3, pp 783-788 ; ref : 30 ref

CODEN
JESOAN
ISSN
0013-4651
Scientific domain
General chemistry, physical chemistry; Crystallography; Electrical engineering; Condensed state physics
Publisher
Electrochemical Society, Pennington, NJ
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Couche multiple Dépôt chimique phase vapeur Epaisseur Etude expérimentale Etude théorique Microscopie électronique balayage Réflectométrie Silicium Surface Tungstène hexafluorure
Keyword (en)
Multiple layer Chemical vapor deposition Thickness Experimental study Theoretical study Scanning electron microscopy Reflectometry Silicon Surface
Keyword (es)
Capa múltiple Depósito químico fase vapor Espesor Estudio experimental Estudio teórico Microscopía electrónica barrido Reflectometría Silicio Superficie
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)

Discipline
Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
5341955

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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