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Optical emission properties of semi-insulating GaAs grown at low temperatures by molecular beam epitaxy

Author
ENRIQUE VITURRO, R1 ; MELLOCH, M. R; WOODALL, J. M
[1] Xerox Webster res. cent., Webster NY 14580, United States
Source

Applied physics letters. 1992, Vol 60, Num 24, pp 3007-3009 ; ref : 20 ref

CODEN
APPLAB
ISSN
0003-6951
Scientific domain
Crystallography; Electronics; Optics; Condensed state physics
Publisher
American Institute of Physics, Melville, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Cathodoluminescence Centre recombinaison Composé minéral Couche épitaxique Défaut antisite Etude expérimentale Gallium Arséniure Interstitiel Niveau défaut Niveau profond Photoluminescence Précipité Préparation Recombinaison porteur charge Recuit thermique Semiconducteur Stoechiométrie Semiisolant
Keyword (en)
Cathodoluminescence Recombination center Inorganic compound Epitaxial film Antisite defect Experimental study Gallium Arsenides Interstitial Defect level Deep level Photoluminescence Precipitate Preparation Charge carrier recombination Thermal annealing Semiconductor materials Stoichiometry
Keyword (es)
Catodoluminiscencia Centro recombinación Compuesto inorgánico Capa epitáxica Defecto antisitio Estudio experimental Galio Arseniuro Intersticial Nivel profundo Fotoluminiscencia Precipitado Preparación Recombinación portador carga Recocido térmico Semiconductor(material) Estequiométría
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H60 Other luminescence and radiative recombination

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
5347301

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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