An 8-ns 4-Mb serial access memory
- Author
- KURIYAMA, H; HIROSE, T; MURAKAMI, S; WADA, T; FUJITA, K; NISHIMURA, Y; ANAMI, K
Mitsubishi Electric Corp., LSI res. development lab., Itami Hyogo 664, Japan - Source
IEEE journal of solid-state circuits. 1991, Vol 26, Num 4, pp 502-506 ; ref : 7 ref
- CODEN
- IJSCBC
- ISSN
- 0018-9200
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Mémoire accès direct Mémoire statique Technologie MOS complémentaire Temps retard Mémoire accès série
- Keyword (en)
- Random access memory(RAM) Static storage Complementary MOS technology Delay time
- Keyword (es)
- Memoria acceso directo Memoria estática Tecnología MOS complementario Tiempo retardo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5354794
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/4.75046 
https://dx.doi.org/10.1109/4.75046
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