Pore morphology and the mechanism of pore formation in n-type silicon
- Author
- SEARSON, P. C1 ; MACAULAY, J. M; ROSS, F. M
[1] Johns Hopkins univ., dep. materials sci. eng., Baltimore MD 21218, United States - Source
Journal of applied physics. 1992, Vol 72, Num 1, pp 253-258 ; ref : 27 ref
- CODEN
- JAPIAU
- ISSN
- 0021-8979
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics; Physics
- Publisher
- American Institute of Physics, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Dissolution électrolytique Décroissance cristalline Etude expérimentale Matériau poreux Morphologie Non métal Orientation cristalline Propagation Semiconducteur Silicium
- Keyword (en)
- Electrodissolution Inverse crystal growth Experimental study Porous material Morphology Non metal Crystal orientation Propagation Semiconductor materials Silicon
- Keyword (es)
- Disolución electrolitica Decrecimiento cristalino Estudio experimental Material poroso Morfología No metal Orientación cristalina Propagación Semiconductor(material) Silicio
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35G Mechanical and acoustical properties; adhesion
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H45 Solid-fluid interfaces
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5359174
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.352123 
https://dx.doi.org/10.1063/1.352123
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