Amorphization and regrowth in Si/CoSi2/Si heterostructures
- Author
- MAEX, K; WHITE, A. E; SHORT, K. T; YONG-FEN HSIEH; HULL, R; OSENBACH, J. W; PRAEFCKE, H. C
AT&T Bell Laboratories, Murray Hill NJ 07974, United States - Source
Journal of applied physics. 1990, Vol 68, Num 11, pp 5641-5647 ; ref : 13 ref
- CODEN
- JAPIAU
- ISSN
- 0021-8979
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics; Physics
- Publisher
- American Institute of Physics, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Amorphisation Densité défaut cristallin Hétérojonction Réduction Silicium Cobalt
- Keyword (en)
- Amorphization Crystal defect density Heterojunction Reduction Silicon
- Keyword (es)
- Amorfización Densidad defecto cristalino Heterounión Reducción Silicio
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5376573
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.346977 
https://dx.doi.org/10.1063/1.346977
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