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A vertical integration of GaAs/GaAlAs LED and vertical FET with embedded Schottky electrodes

Author
CHANG-HEE HONG; CHANG-TAE KIM; YOUNG-SE KWON
Korea advanced inst. sci. technology, dep. electrical eng., Seoul 130-650, Korea, Republic of
Source

Japanese journal of applied physics. 1990, Vol 29, Num 12, pp L2427-L2429 ; 2 ; ref : 6 ref

CODEN
JJAPA5
ISSN
0021-4922
Scientific domain
Crystallography; Optics; Condensed state physics; Physics; Plasma physics
Publisher
Japanese journal of applied physics, Tokyo
Publication country
Japan
Document type
Article
Language
English
Keyword (fr)
Aluminium Gallium Arséniure Mixte Composé organométallique Diode barrière Schottky Diode électroluminescente Dépôt chimique phase vapeur Fabrication microélectronique Gallium Arséniure Transistor effet champ
Keyword (en)
Aluminium Gallium Arsenides Mixed Organometallic compound Schottky barrier diode Light emitting diode Chemical vapor deposition Microelectronic fabrication Gallium Arsenides Field effect transistor
Keyword (es)
Aluminio Galio Arseniuro Mixto Compuesto organometálico Diodo barrera Schottky Diodo electroluminescente Depósito químico fase vapor Fabricación microeléctrica Galio Arseniuro Transistor efecto campo
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
5378656

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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