A sub-10 ps/gate direct-coupled FET logic circuit with 0.2μm-gate GaAs MESFET
- Author
- TSUJI, H; INOMATA FUJISHIRO, H; NAKAMURA, H; NISHI, S
Oki Electric Industry Co., Ltd, res. development group, semiconductor technology lab., Hachioji-shi, Tokyo 193, Japan - Source
Japanese journal of applied physics. 1990, Vol 29, Num 12, pp L2438-L2441 ; 2 ; ref : 7 ref
- CODEN
- JJAPA5
- ISSN
- 0021-4922
- Scientific domain
- Crystallography; Optics; Condensed state physics; Physics; Plasma physics
- Publisher
- Japanese journal of applied physics, Tokyo
- Publication country
- Japan
- Document type
- Article
- Language
- English
- Keyword (fr)
- Circuit logique Couche multiple Couplage Fabrication microélectronique Gallium Arséniure Grille transistor Photorésist Transistor effet champ barrière Schottky
- Keyword (en)
- Logic circuit Multiple layer Coupling Microelectronic fabrication Gallium Arsenides Transistor gate Photoresist Metal semiconductor field effect transistor
- Keyword (es)
- Circuito lógico Capa múltiple Acoplamiento Fabricación microeléctrica Galio Arseniuro Rejilla transistor Fotorresistente Transistor efecto campo barrera Schottky
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5378659
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1143/JJAP.29.L2438 
https://dx.doi.org/10.1143/JJAP.29.L2438
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