An all refractory NbN Josephson junction medium scale integrated circuit process
- Author
- KERBER, G. L; COOPER, J. E; FRY, H. W; KING, G. R; MORRIS, R. S; SPARGO, J. W; TOTH, A. G
Hughes Aircraft Co., Carlsbad CA 92009, United States - Source
Journal of applied physics. 1990, Vol 68, Num 9, pp 4853-4860 ; ref : 20 ref
- CODEN
- JAPIAU
- ISSN
- 0021-8979
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics; Physics
- Publisher
- American Institute of Physics, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Azote Niobium Caractéristique électrique Circuit intégré Couche mince Couche multiple Courant critique Dépôt chimique phase vapeur Fabrication microélectronique Gravure plasma Jonction Josephson Matériau réfractaire Silice
- Keyword (en)
- Nitrogen Niobium Electrical characteristic Integrated circuit Thin film Multiple layer Critical current Chemical vapor deposition Microelectronic fabrication Plasma etching Josephson junction Refractory material Silica
- Keyword (es)
- Nitrógeno Niobio Característica eléctrica Circuito integrado Capa fina Capa múltiple Corriente crítica Depósito químico fase vapor Fabricación microeléctrica Grabado plasma Unión Josephson Material refractario Sílice
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5380760
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.346145 
https://dx.doi.org/10.1063/1.346145
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